Silicide-interface polysilicon resistor

Details Silicide-interface polysilicon resistor Silicide-interface polysilicon resistor

2007-03-09

2011-12-13

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE21004, C257SE29326, C438S384000

Reexamination Certificate

active

08076754

ABSTRACT:
A silicide-interface polysilicon resistor is disclosed. The silicide-interface polysilicon resistor includes a substrate, an oxide layer located on top of the substrate, and a polysilicon layer located on top of the oxide layer. The polysilicon layer includes multiple semiconductor junctions. The silicide-interface polysilicon resistor also includes a layer of silicide sheets, and at least one of the silicon sheets is in contact with one of the semiconductor junctions located within the polysilicon layer.

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Quirk et al., “Characteristics of Semiconductor Materials,” Semiconductor Manufacturing Technology, Prentice Hall, 2001, pp. 33-39.

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