Silicide interconnection with Schottky barrier diode isolation

Details Silicide interconnection with Schottky barrier diode isolation Silicide interconnection with Schottky barrier diode isolation

1993-06-24

1994-08-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 39, 437 58, 437148, 437931, 148DIG19, 148DIG103, H01L 2702, H01L 2980

Patent

active

053366379

ABSTRACT:
In a semiconductor device, an interconnection of differentially doped diffusion regions formed on a substrate includes an interconnecting layer disposed between the two diffusion regions so that the two regions are coupled to one another. The interconnect region is defined by the existing mask boundaries of N+ dopant and P+ dopant regions such that N+ and P+ dopant is not allowed to enter the interconnect region. Thus, the interconnect region is defined without requiring additional masking and etching steps. Once the interconnect region is defined, then the interconnecting layer is formed by a deposition and sintering process. The interconnecting layer provides a schottky barrier and ohmic contact.

REFERENCES:
patent: Re33209 (1990-05-01), Plummer
patent: 4054893 (1977-10-01), Hutson
patent: 4374700 (1983-02-01), Scott et al.
patent: 4430792 (1984-02-01), Temple
patent: 4545116 (1985-10-01), Lau
patent: 4653025 (1987-03-01), Minato et al.
patent: 4692991 (1987-09-01), Flowers
patent: 4785341 (1988-11-01), Ning et al.
patent: 4871686 (1989-10-01), Davies
patent: 4896199 (1990-01-01), Tsuzuki et al.
patent: 4920388 (1990-04-01), Blanchard et al.
patent: 4937639 (1990-06-01), Yao et al.
patent: 4939567 (1990-07-01), Kenney
patent: 4942448 (1990-07-01), Tsukamoto et al.
patent: 4980745 (1990-12-01), Muroga
patent: 4983544 (1991-01-01), Lu et al.
patent: 5061981 (1991-10-01), Hall
patent: 5166094 (1992-11-01), Kapoor
patent: 5225359 (1993-07-01), DeLong
patent: 5250834 (1993-10-01), Nowak
Kircher, et al, IBM Technical Disclosure Bulletin, vol. 13, No. 2, Jul. 1970.
Anantha, et al, IBM Technical Disclosure Bulletin, vol. 14, No. 1, Jun. 1971.
Chesbro, et al, IBM Technical Disclosure Bulletin, vol. 27, No. 5, Oct. 1984.
Magdo, et al, IBM Technical Disclosure Bulletin, vol. 14, No. 3, Aug. 1971.
Berger, et al, IBM Technical Disclosure Bulletin, vol. 21, No. 12, May 1979.
Howard, et al, IBM Technical Disclosure Bulletin, vol. 23, No. 7A, Dec. 1980.

Affiliated with

Also associated with

Rating

Silicide interconnection with Schottky barrier diode isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicide interconnection with Schottky barrier diode isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicide interconnection with Schottky barrier diode isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-215899