Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-12-31
1999-03-30
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257769, H01L 2348, H01L 2352, H01L 2940
Patent
active
058893318
ABSTRACT:
The invention relates to a process of forming a semiconductor structure. The process includes patterning a conductive layer with a top surface and opposing sides over an area of a semiconductor substrate, depositing a dielectric layer over the conductive layer, and etching the dielectric layer to form spacer portions adjacent the sides of the conductive layer and to expose the top surface and a portion of the conductive layer. The process may be used to form salicides wherein the thickness of the silicide layer of the conductive layer is greater than the thickness of the silicide layer in the diffusion region of a device. The invention also relates to a semiconductor device that includes a conductive layer with opposing side portions over an active area of a semiconductor substrate and a dielectric spacer adjacent to less than the entire portion of a side portion of the conductive layer. The semiconductor device may be used with a salicide process to yield a silicide layer over the conductive layer that is thicker than the silicide layer in the diffusion regions.
REFERENCES:
patent: 4485550 (1984-12-01), Koeneke et al.
patent: 4873204 (1989-10-01), Wong et al.
patent: 4905073 (1990-02-01), Chen et al.
patent: 5053848 (1991-10-01), Houston et al.
Clark S. V.
Intel Corporation
Saadat Mahshid
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