Silicide bridge contact process

Details Silicide bridge contact process Silicide bridge contact process

1986-10-20

1991-01-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437 52, 437 59, 437919, 148DIG147, 148DIG19, H01L 2144

Patent

active

049835440

ABSTRACT:
A method of forming a bridge contact between a source diffusion region of a transfer gate FET and a polysilicon-filled trench storage capacitor electrodes of the FET. A layer of titanium is evaporated at a temperature of approximately 370.degree. C., so that the titanium has a substantially columnar grain structure and a minimum of matrix material. The bottom portions of the columnar grains have a lateral length that approximates the lateral length of the dielectric separating the source diffusion from the poly-filled trench. Thus, upon sintering at 700.degree. C. in an N.sub.2 atmosphere, titanium silicide will form over all exposed silicon regions as well as the dielectric, without shorting the FET electrodes together.

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