Silicide agglomeration fuse device

Details Silicide agglomeration fuse device Silicide agglomeration fuse device

1995-09-29

1998-01-13

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257665, 257773, 257755, 257757, 437 46, 437200, 437233, 437922, H01L 2900

Patent

active

057082910

ABSTRACT:
A fusible link device disposed on a semiconductor substrate for providing discretionary electrical connections. The fusible link device of the invention includes a silicide layer and a polysilicon layer formed on the silicide layer and has a first un-programmed resistance. The silicide layer agglomerates to form an electrical discontinuity in response to a predetermined programming potential being applied across the silicide layer, such that the resistance of the fusible link device can be selectively increased to a second programmed resistance.

REFERENCES:
patent: 4042950 (1977-08-01), Price
patent: 4356622 (1982-11-01), Widmann
patent: 4494135 (1985-01-01), Moussie
patent: 4518981 (1985-05-01), Schlupp
patent: 4635091 (1987-01-01), Roger
patent: 4748491 (1988-05-01), Takagi
patent: 4796075 (1989-01-01), Whitten
patent: 5066998 (1991-11-01), Fischer et al.
"Polysilicon Fuse Structure," IBM Technical Disclosure Bulletin, vol. 29, No. 1 (Jun. 1986) pp. 144-145.

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