Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-07-16
1999-10-19
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257625, 257773, 257755, H01L 2900
Patent
active
059694041
ABSTRACT:
A fusible link device disposed on a semiconductor substrate for providing discretionary electrical connections. The fusible link device of the invention includes a silicide layer and a polysilicon layer formed on the silicide layer and has a first unprogrammed resistance. The silicide layer agglomerates to form an electrical discontinuity in response to a predetermined programming potential being applied across the silicide layer, such that the resistance of the fusible link device can be selectively increased to a second programmed resistance
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"Polysilicon Fuse Structure"; IBM Technical Disclosure Bulletin; vol. 29, No. 1, Jun. 1986; pp. 144-145.
Alavi Mohsen
Bohr Mark T.
Faatz Cindy T.
Intel Corporation
Martin-Wallace Valencia
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