Silicide agglomeration device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257625, 257773, 257755, H01L 2900

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active

059694041

ABSTRACT:
A fusible link device disposed on a semiconductor substrate for providing discretionary electrical connections. The fusible link device of the invention includes a silicide layer and a polysilicon layer formed on the silicide layer and has a first unprogrammed resistance. The silicide layer agglomerates to form an electrical discontinuity in response to a predetermined programming potential being applied across the silicide layer, such that the resistance of the fusible link device can be selectively increased to a second programmed resistance

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"Polysilicon Fuse Structure"; IBM Technical Disclosure Bulletin; vol. 29, No. 1, Jun. 1986; pp. 144-145.

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