Silica glass member for semiconductor and production method...

Details Silica glass member for semiconductor and production method... Silica glass member for semiconductor and production method...

2006-08-01

2006-08-01

Vincent, Sean (Department: 1731)

Glass manufacturing

Processes

With shaping of particulate material and subsequent fusing...

C065S031000, C065S032100, C065S033100

Reexamination Certificate

active

07082789

ABSTRACT:
A silica glass member for semiconductor in which each concentration of Fe, Cu, Cr and Ni is 5 ppb or less and the concentration of an OH group is 30 ppm or less and which has a viscosity of 1013.0poise or more at 1200° C. is provided as a silica glass member for semiconductor having high heat-resistance and higher purity.

REFERENCES:
patent: 4-046020 (1992-02-01), None
patent: 8-081226 (1996-03-01), None
patent: 8-165131 (1996-06-01), None
patent: 8-183621 (1996-07-01), None
patent: 10-114532 (1998-05-01), None
patent: 2001-089161 (2001-04-01), None
patent: 2001-151531 (2001-06-01), None

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