Etching a substrate: processes – Mechanically shaping – deforming – or abrading of substrate
Reexamination Certificate
2011-06-07
2011-06-07
O'Hern, Brent T (Department: 1783)
Etching a substrate: processes
Mechanically shaping, deforming, or abrading of substrate
C117S220000, C428S034100, C428S034400, C432S262000, C501S001000
Reexamination Certificate
active
07955511
ABSTRACT:
A silica glass crucible used for pulling up silicon single crystal at a high temperature. The silica glass crucible may have at least an outer surface of a wall part of the crucible covered with fine grooves having a length of less than 200 μm, a width of less than 30 μm and a depth of from more than 3 μm to less than 30 μm. The fine groves may be formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and may exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500° C. is more than 0.6.
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Tsuji Yoshiyuki
Tsujimoto Toshio
Japan Super Quartz Corporation
O'Hern Brent T
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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