Silica glass crucible

Etching a substrate: processes – Mechanically shaping – deforming – or abrading of substrate

Reexamination Certificate

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Details

C117S220000, C428S034100, C428S034400, C432S262000, C501S001000

Reexamination Certificate

active

07955511

ABSTRACT:
A silica glass crucible used for pulling up silicon single crystal at a high temperature. The silica glass crucible may have at least an outer surface of a wall part of the crucible covered with fine grooves having a length of less than 200 μm, a width of less than 30 μm and a depth of from more than 3 μm to less than 30 μm. The fine groves may be formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and may exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500° C. is more than 0.6.

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