Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2008-03-25
2010-11-23
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257SE29104, C257SE21359, C257SE29338, C257S211000, C257S339000, C438S572000
Reexamination Certificate
active
07838888
ABSTRACT:
An SiC semiconductor device is provided, which comprises: a substrate made of silicon carbide and having a principal surface; a drift layer made of silicon carbide and disposed on the principal surface; an insulating layer disposed on the drift layer and including an opening; a Schottky electrode contacting with the drift layer through the opening; a termination structure disposed around an outer periphery of the opening; and second conductivity type layers disposed in a surface part of the drift layer, contacting the Schottky electrode, surrounded by the termination structure, and separated from one another. The second conductivity type layers include a center member and ring members. Each ring member surrounds the center member and is arranged substantially in a point symmetric manner with respect to the center member.
REFERENCES:
patent: 2008/0169475 (2008-07-01), Nishio et al.
patent: A-2000-294804 (2000-10-01), None
patent: A-2003-158259 (2003-05-01), None
English Translation of JP 2003-158259.
Office Action dated Apr. 22, 2009 issued by Japan Patent Office in corresponding JP Application No. 2007-109224 (and English Translation).
Okuno Eiichi
Suzuki Naohiro
Yamamoto Takeo
DENSO CORPORATION
Mandala Victor A
Moore Whitney
Posz Law Group , PLC
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