Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1983-12-28
1985-07-30
Meros, Edward J.
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
423210, 423299, 436103, 436182, C01B 3304
Patent
active
045321205
ABSTRACT:
A process for the removal of and analysis of phosphine and arsine impurities in silane gas. Silane gas which normally contains the impurities of AsH.sub.3 and PH.sub.3 is contacted with a solution of NaAlH.sub.4 in dimethoxyethane, other ether or amine to remove the impurities therefrom. The dimethoxyethane or other ether solution may then be hydrolyzed with water or alcohol to evolve hydrogen gas from the NaAlH.sub.4 and to re-evolve phosphine and arsine which may then be quantitatively determined by gas chromatography, atomic absorption, or other means.
REFERENCES:
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patent: 2987139 (1961-06-01), Bush
patent: 3041141 (1962-06-01), Shoemaker et al.
patent: 3043664 (1962-07-01), Mason et al.
patent: 3446605 (1969-05-01), Finholt
patent: 3512932 (1970-05-01), Stern et al.
Preparation of High-Purity Silicon from Silane, Charles H. Lewis et al.
1961, J. Electrochemical Society, Lewis et al.
Nelson Gunner E.
Smith Isaac L.
Alway Robert
Ethyl Corporation
Hunt John F.
Johnson Donald L.
Meros Edward J.
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