Signal propagating device for a plurality of memory cells

Details Signal propagating device for a plurality of memory cells Signal propagating device for a plurality of memory cells

1982-06-07

1984-12-25

Gensler, Paul

Wave transmission lines and networks

Coupling networks

Delay lines including long line elements

333245, 333236, 365 63, 365194, H03H 730, H01P 900

Patent

active

044906978

ABSTRACT:
There is provided a signal propagating device for receiving an input signal at an input end thereof and supplying the input signal to a plurality of memory cells arranged in one row. The signal propagating device includes a word line connected to transmit the input signal and having a plurality of line segments electrically coupled to the memory cells. A preceding one of the line segments is formed to have a larger average width than a succeeding one of the line segments.

REFERENCES:
patent: 3638202 (1972-01-01), Schroeder
Wallis et al., "Transmission Line," IBM Technical Disclosure Bulletin, vol. 8, No. 11, Apr., 1966, p. 1493.
"A 25ns 16K.times.1 Static RAM", T. Tsujido et al. (NEC), ISSCC 81 Digest of Technical Papers, pp. 20-21 and 256.
"Hi-CMOSII 4K Static RAM", O. Minato et al. (Hitachi), ISSCC 81 Digest of Technical Papers, pp. 14-15 and 253.
"An 18ns CMOS/SOS 4K Static RAM", M. Isobe (Toshiba), ISSCC 81 Digest of Technical Papers, pp. 12-13 and 252.
"PN Junction Forms Distributed RC Network," Electrical Design News, vol. 8, No. 4, Apr. 1963, pp. 8-9.
"One-Micron Polycide (WSi2 on Poly-Si) MOSFET Technology," Journal of the Electrochemical Society, vol. 128, No. 10, Oct. 1981, pp. 2207-2214.

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