Amplifiers – With semiconductor amplifying device – Including gain control means
Patent
1986-08-25
1988-07-12
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including gain control means
330277, 330300, 330307, 330311, H03G 330
Patent
active
047572760
ABSTRACT:
The signal-processing circuit of the present invention, more particularly the gain-controlled amplifier circuit, comprises a MOSFET (metal oxide semiconductor field-effect transistor), and an NPN bipolar transistor cascade-connected to the MOSFET. The gain-controlled amplifier circuit amplifiers the signal supplied to the gate of the MOSFET, with the gain corresponding to the voltage applied to the base of the NPN bipolar transistor. The circuit can generate an output signal at one end of the emitter-collector path of the NPN bipolar transistor, said output signal containing negligibly small distortion components; in particular, negligible third distortion components.
REFERENCES:
patent: 3541234 (1970-11-01), Austin
patent: 3609479 (1971-09-01), Lin et al.
patent: 4586004 (1986-04-01), Valdez
Chizhikov et al., "Broadband Amplifier for Measuring Propagation of Ultrasonic Vibrations in Sulios," Instruments & Experimental Techniques, vol. 19, No. 5, Mar. 1977, pp. 1406-1407.
Roberts et al., "M.O.S.-Bipolar Amplifiers," Wireless World, Jul. 1969, pp. 328-330.
Nienhuis, "Integrated Audio Amplifiers with High Input Impedance and Low Noise," Phillips Technical Review, 1970, pp. 245-247.
Vora, "Fet-Bipolar Integration," IBM Technical Disclosure Bulletin, vol. 13, No. 5, Oct. 1970 p. 1106.
Research Disclosure, May 1979, No. 181, p. 211.
Translation of the Claims and Description of the Drawings of Japanese Patent Disclosure (KOKAI) No. 57-160170.
Translation of pages 96-98 of MOS IC & FET" in the Electronic Science Series, 27.
Ishii Tetsuo
Kimura Takashi
Matsunaga Taira
Nomura Mie
Tanimata Shoichi
Kabushiki Kaisha Toshiba
Mullins James B.
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