Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge injection device
Patent
1993-11-30
1996-04-16
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge injection device
257215, 257231, 257232, 257236, 377 57, 377 58, 377 59, 377 60, 364606, 364807, 364862, 364844, H01L 2976, H01L 27148, G11C 1918, G06G 700
Patent
active
055085385
ABSTRACT:
The present invention is embodied in a charge coupled device (CCD)/charge injection device (CID) architecture capable of performing a Fourier transform by simultaneous matrix vector multiplication (MVM) operations in respective plural CCD/CID arrays in parallel in O(1) steps. For example, in one embodiment, a first CCD/CID array stores charge packets representing a first matrix operator based upon permutations of a Hartley transform and computes the Fourier transform of an incoming vector. A second CCD/CID array stores charge packets representing a second matrix operator based upon different permutations of a Hartley transform and computes the Fourier transform of an incoming vector. The incoming vector is applied to the inputs of the two CCD/CID arrays simultaneously, and the real and imaginary parts of the Fourier transform are produced simultaneously in the time required to perform a single MVM operation in a CCD/CID array.
REFERENCES:
patent: 5054040 (1991-10-01), Yariv et al.
patent: 5089983 (1992-02-01), Chiang
patent: 5258934 (1993-11-01), Agranat et al.
Barhen Jacob
Fijany Amir
Toomarian Nikzad
California Institute of Technology
Keller Michael L.
Loke Steven H.
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