Signal output circuit having bipolar transistors at output, for

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307475, 307542, 307548, 307570, H03K 19096, H03K 1716

Patent

active

050668757

ABSTRACT:
Disclosed herein is a signal output circuit designed for use in a CMOS IC and having a bipolar transistor at output. A high-level output NPN-type bipolar transistor has its collector-emitter path connected between a node to which a high-level power-supply potential is applied, and an output node for outputting a signal. A low-level output NPN-type bipolar transistor has its collector-emitter path connected between the output node and a node to which a low-level power-supply potential is applied. An N-channel MOS transistor has its source-drain path connected between the output node and the base of the bipolar transistor, and is controlled by a first input signal. An N-channel MOS transistor has its source-drain path connected between the output node and the node to which the low-level power-potential is applied. A control signal output by a control signal generating circuit is supplied to the gate of this MOS transistor, and is turned on when the signal at the output node falls to a sufficiently low level after the bipolar transistor has been turned on.

REFERENCES:
patent: 4837462 (1989-06-01), Watanabe et al.
patent: 4902914 (1990-02-01), Masuoka

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