Signal layer for generating characteristic optical plasma...

Details Signal layer for generating characteristic optical plasma... Signal layer for generating characteristic optical plasma...

2006-02-28

2006-02-28

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S016000, C438S706000, C438S710000, C438S719000, C438S720000, C438S723000, C438S724000, C216S059000, C216S060000

Reexamination Certificate

active

07005305

ABSTRACT:
A technique is provided that may be used to improve optical endpoint detection in a plasma etch process. A semiconductor structure is manufactured that includes at least one electrical device. The technique is adapted for forming a signal layer on or in a wafer, wherein the signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma. The chemical element does not have a primary influence on the electrical properties of the electrical device. The signal layer is for use in a plasma etch process to detect a plasma etch endpoint if the characteristic optical emission is detected. The signal layer may be patterned and may be incorporated into a stop layer.

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Wolf et al., Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, p. 191.

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