SiGe photodetector with high efficiency

Details SiGe photodetector with high efficiency SiGe photodetector with high efficiency

1998-04-06

2000-03-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257 19, 257 21, 257 22, 257440, 257457, 372 43, 372 45, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

060435178

ABSTRACT:
A photodetector which can be operated in two wavelength ranges and is comprised of two detectors (A, B) arranged one on top of the other. A Si Schottky diode forms detector A which absorbs light in a region .lambda.<0.9 .mu.m. Longer-waved light (1 .mu.m<.lambda.<2 .mu.m) is absorbed in detector B which is comprised of an Si/SiGe pn-diode. To increase the efficiency, detector B is made with an integrated resonator. A further increase of the efficiency of the photodetector is accomplished through the mounting of a Bragg reflector on the absorbing layer of detector B.

REFERENCES:
patent: 4959694 (1990-09-01), Gell
patent: 5942789 (1999-08-01), Morikawa
Karunasiri, R.P.G., Park, J.S.; Wang, K.L.: Normal incidence infrared detector using intervalence-subband transitions in Si.sub.1-x Ge.sub.x /Si quantum wells, In: Appl. Phys. Lett. 61(20), 16. Nov. 1992, S. 2434-2436.
Huang, F.Y., et al.: Normal-incidence strained-layer superlattice Ge.sub.0.5 Si.sub.0.5 /Si photodiodes near 1.3 .mu.m. In: Appl. Phys. Lett. 67(4), 24. Jul. 1995, S.566-568.
Misra, R., Greve, D.W., Schlesinger, T.E.: Infrared absorption in Ge.sub.x Si.sub.1-x quantum wells. In: Appl. Phys. Lett. 67(17), 23. Oct. 1995, S. 2548-2550.
Edelman, F., et al.: Fast interfacial oxidation of amorphous Si.sub.1-x Ge.sub.x :H by SnO.sub.2. In: Appl. Phys. Lett. 57(3), 17. Jul. 1995, S.389-391.

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