SiGe MOSFET with an erosion preventing Si x1 Ge y1 layer

Details SiGe MOSFET with an erosion preventing Si x1 Ge y1 layer SiGe MOSFET with an erosion preventing Si x1 Ge y1 layer

2007-02-13

2007-02-13

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S019000, C257S055000, C257S063000, C257S616000, C257SE31049, C257SE21207

Reexamination Certificate

active

11162904

ABSTRACT:
A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a SixGeylayer and a SixGeyprotection layer. The gate structure is deposited on the substrate and the spacer is deposited on the sidewalls of the gate structure. The SixGeylayer is deposited in the substrate on both sides of the spacer and extended to a portion beneath part of the spacer. In addition, the top level of the SixGeylayer is higher than the surface of the substrate. Moreover, the SixGeyprotection layer is deposited on the SixGeylayer and the SixGeyprotection layer comprises Six1Gey1, where 0≦y1<y.

REFERENCES:
patent: 4533935 (1985-08-01), Mochizuki
patent: 7009200 (2006-03-01), Tezuka et al.
patent: 2003/0227057 (2003-12-01), Lochtefeld et al.
patent: 2005/0045905 (2005-03-01), Chu et al.

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