SiGe heterojunction bipolar transistor (HBT)

Details SiGe heterojunction bipolar transistor (HBT) SiGe heterojunction bipolar transistor (HBT)

2008-01-08

2008-01-08

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000, C257SE29188, C438S338000, C438S312000

Reexamination Certificate

active

10711482

ABSTRACT:
A heterojunction bipolar transistor is formed in a semiconductor substrate of a first conductivity type including a collector region. A base region is formed on the substrate and an emitter region is formed over the base region. At least one of the collector, base and emitter regions includes a first region doped with an impurity having a first concentration and a second region doped with the impurity having a second concentration. Noise performance and reliability of the heterojunction bipolar transistor is improved without degrading ac performance.

REFERENCES:
patent: 5177583 (1993-01-01), Endo et al.
patent: 5656514 (1997-08-01), Ahlgren et al.
patent: 6967144 (2005-11-01), Sadovnikov
patent: 7135721 (2006-11-01), Toyoda et al.
patent: 2003/0201461 (2003-10-01), Sato et al.
Zhao et al., “Analysis and Simulation of the Performance of Si/SiGe HBTs and Monolithic Integrated Preamplifiers of Photoreceivers”, Proceedings of the PSPIE (International Society for Optical Engineering) Conference, Sep. 18-19, 1998, vol. 3551, pp. 95-102.

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