Sidewall-sealed poly-buffered LOCOS isolation

Details Sidewall-sealed poly-buffered LOCOS isolation Sidewall-sealed poly-buffered LOCOS isolation

1990-12-05

1992-10-27

Mintel, William

357 47, 357 55, 357 54, H01L 2712

Patent

active

051594285

ABSTRACT:
This is a semiconductor device, comprising: a semiconductor body having an isolation region separating at least two active device regions; pad oxide layers disposed on said active regions; polysilicon layers disposed on said pad oxide layers; silicon nitride layers disposed on said polysilicon layers; and a sidewall seal disposed all along the perimeter of the active device regions to seal said active device regions against oxygen diffusion. The resulting field oxide isolation region has reduced oxide encroachment into the active moat region.

REFERENCES:
patent: 4376336 (1983-03-01), Endo et al.
patent: 4758530 (1988-07-01), Schubert
patent: 4897364 (1990-01-01), Nguyen et al.
patent: 4956692 (1990-09-01), Ozaki et al.
patent: 5043778 (1991-08-01), Teng et al

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