Sidewall doping technique for SOI transistors

Details Sidewall doping technique for SOI transistors Sidewall doping technique for SOI transistors

1991-06-10

1994-03-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437141, 257347, H01L 21265

Patent

active

052926702

ABSTRACT:
A method of sidewall doping is described wherein the implantation of the dopant is done after the high temperature sidewall oxidation formation. Therefore, this method allows high concentrations of the dopant to be retained along the sidewall thus deceasing the corner coupling.

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