Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1993-08-27
1994-11-15
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257390, 365 96, H01L 2702, H01L 1700
Patent
active
053651057
ABSTRACT:
A described embodiment of the present invention includes an anti-fuse comprising: a first conductive layer having a horizontal major surface and having a substantially vertical sidewall; a thick insulating layer formed on the horizontal major surface of the first conductive layer; a dielectric layer formed on the vertical sidewall; and a second conductive layer formed on the dielectric layer. In an additional embodiment, the first and/or second conductive layers comprise polycrystalline silicon and a conductive material selected from the group of titanium, tungsten, molybdenum, platinum, titanium silicide, tungsten silicide, molybdenum silicide, platinum silicide, titanium nitride and combinations thereof.
REFERENCES:
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4914055 (1990-04-01), Gordon et al.
Chen Kueing-Long
Liu David K.
Riemenschneider Bert R.
Crane Sara W.
Donaldson Richard L.
Hiller William E.
Monin, Jr. Donald L.
Sorensen Douglas A.
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