Side source center sink plasma reactor

Details Side source center sink plasma reactor Side source center sink plasma reactor

1989-09-18

1991-06-04

Niebling, John F.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

118 501, 156345, 20429835, 20429834, C23F 300

Patent

active

050211382

ABSTRACT:
A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plasma reactor chamber, provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision for forcing the gas through one or more through holes in the substrates, provision for continuously exhausting gas, an automatic transport or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.

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Brian Chapman, Glow Discharge Processes, John Wiley & Sons, New York, 1980, pp. 153-156, 215-236.

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