Side light emitting type semiconductor laser diode having...

Details Side light emitting type semiconductor laser diode having... Side light emitting type semiconductor laser diode having...

2011-03-01

2011-03-01

Nguyen, Cuong Q (Department: 2811)

Coherent light generators

Particular active media

Semiconductor

C257S090000, C257S102000, C257S103000, C257SE33068, C257SE33027, C372S043010, C372S038060, C372S038060

Reexamination Certificate

active

07899103

ABSTRACT:
Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.

REFERENCES:
patent: 5123070 (1992-06-01), Bradley
patent: 6207973 (2001-03-01), Sato et al.
patent: 6455340 (2002-09-01), Chua et al.
patent: 6498048 (2002-12-01), Morita
patent: 6795471 (2004-09-01), Watanabe et al.
patent: 2004/0094773 (2004-05-01), Kiyoku et al.
patent: 2005/0167836 (2005-08-01), Tomiya et al.
patent: 2005/0265412 (2005-12-01), Ueki

Affiliated with

Also associated with

Rating

Side light emitting type semiconductor laser diode having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Side light emitting type semiconductor laser diode having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Side light emitting type semiconductor laser diode having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2763495