Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated
Reexamination Certificate
2007-12-25
2007-12-25
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Encapsulated
C257S098000, C257S099000, C438S025000, C438S026000, C438S029000
Reexamination Certificate
active
11159492
ABSTRACT:
A side-emission type semiconductor light-emitting device10includes a substrate12, and the substrate12is provided with a case14formed of a resin having opacity and reflectivity. The substrate12is formed, on its surface, with electrodes18aand18bonto which an LED chip20is bonded. A transparent or translucent resin16is charged between the substrate12and the case14whereby the LED chip20is molded. A light-emitting surface of the side-emission type semiconductor light-emitting device10includes surfaces16a,16band a surface opposite to the surface16bwhich are formed of the transparent or translucent resin16. Furthermore, the light-emitting surface is formed by a roughened surface. Due to this, a light outputted from the LED chip and a light reflected from the case14is scattered by the light-emitting surface.
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Bodner Gerald T.
Nguyen Joseph
Parker Kenneth
Rohm & Co., Ltd.
LandOfFree
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