Side-emission type semiconductor light-emitting device and...

Details Side-emission type semiconductor light-emitting device and... Side-emission type semiconductor light-emitting device and...

2005-07-19

2005-07-19

Smith, Brad (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Encapsulated

C257S099000, C257S081000

Reexamination Certificate

active

06919586

ABSTRACT:
A side-emission type semiconductor light-emitting device10includes a substrate12, and the substrate12is provided with a case14formed of a resin having opacity and reflectivity. The substrate12is formed, on its surface, with electrodes18aand18bonto which an LED chip20is bonded. A transparent or translucent resin16is charged between the substrate12and the case14whereby the LED chip20is molded. A light-emitting surface of the side-emission type semiconductor light-emitting device10includes surfaces16a, 16band a surface opposite to the surface16bwhich are formed of the transparent or translucent resin16. Furthermore, the light-emitting surface is formed by a roughened surface. Due to this, a light outputted from the LED chip and a light reflected from the case14is scattered by the light-emitting surface.

REFERENCES:
patent: 6483623 (2002-11-01), Maruyama
patent: 2002/0057056 (2002-05-01), Okazaki

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