SiCr microfuses

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Patent

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Details

257537, 257734, 257763, 257765, 257751, H01L 2702, H01L, H01L 2946

Patent

active

052850994

ABSTRACT:
A SiCr microfuse, deletable either by electrical voltage pulses or by laser pulses, for rerouting the various components in an integrated circuit, as where redundancy in array structures is implemented, and the method of fabricating same, at any wiring level of the chip, by utilizing a direct resist masking of the SiCr fuse layer to eliminate problems of mask damage and residual metal adjacent the fuse.

REFERENCES:
patent: 4951118 (1993-08-01), Nakamura

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