SiC single-crystal substrate and method of producing SiC...

Details SiC single-crystal substrate and method of producing SiC... SiC single-crystal substrate and method of producing SiC...

2009-05-20

2011-10-25

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S070000, C257S076000, C257S094000, C257S096000, C257S098000

Reexamination Certificate

active

08044408

ABSTRACT:
The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.

REFERENCES:
patent: 2008/0237609 (2008-10-01), Powell et al.
patent: 05-262599 (1993-10-01), None
patent: 08-143396 (1996-06-01), None
patent: 2003-119097 (2003-04-01), None
Yu. M. Tairov et al., “General Principles of Growing Large-Size Single Crystals of Various Silicon Carbide Polytypes”, Journal Crystal Growth, vol. 52 (1981), pp. 146-150.
Kazuyuki Koga et al., “SiC Blue Light Emitting Diode”, p. 23-29, Paper of Electronic Material Committee, No. EFM-88-24-P24, The Institute of Electrical Engineering of Japan, (1988).

Affiliated with

Also associated with

Rating

SiC single-crystal substrate and method of producing SiC... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SiC single-crystal substrate and method of producing SiC..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SiC single-crystal substrate and method of producing SiC... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4278480