SiC single crystal, method for manufacturing SiC single...

Details SiC single crystal, method for manufacturing SiC single... SiC single crystal, method for manufacturing SiC single...

2005-05-10

2005-05-10

Hiteshew, Felisa (Department: 1765)

Coating processes

With pretreatment of the base

Metal base

C117S084000, C117S089000, C423S328200

Reexamination Certificate

active

06890600

ABSTRACT:
A refined SiC single crystal that includes a small number of defects is provided as follows. At a first growth step, a first seed crystal is formed from a crude SiC single crystal, and a first grown crystal is formed on a first growth surface, which is a plane having an inclination of 20 degrees or smaller from a {1-100} plane or an inclination of 20 degrees or smaller from a {11-20} plane. At an intermediate growth step, an n growth crystal is formed on an n growth surface, which is a plane having an inclination of 45 to 90 degrees from an (n−1) growth surface and an inclination of 60 to 90 degrees from a {0001} plane. At a final growth step, a final SiC single crystal is formed on a final growth surface, which has an inclination of 20 degrees or smaller from a {0001} plane.

REFERENCES:
patent: 5958132 (1999-09-01), Takahashi et al.
patent: A-5-262599 (1993-10-01), None
patent: A-8-143396 (1996-06-01), None
patent: H10-182297 (2004-04-01), None

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