SIC semiconductor device and method for manufacturing the same

Details SIC semiconductor device and method for manufacturing the same SIC semiconductor device and method for manufacturing the same

2007-04-10

2010-12-21

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S055000, C257S065000, C257S076000, C257S183000, C257S197000, C257S328000, C257S329000

Reexamination Certificate

active

07855384

ABSTRACT:
A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.

REFERENCES:
patent: 6117735 (2000-09-01), Ueno
patent: 7282739 (2007-10-01), Kaneko
patent: 2005/0258454 (2005-11-01), Kumar et al.
patent: 2006/0060884 (2006-03-01), Ohyanagi et al.
patent: 2006/0071217 (2006-04-01), Ohyanagi et al.
patent: A-2005-108926 (2005-04-01), None
Zhao, Jr., et al., “3.6 mΩcm2, 1726V 4H-SiC Normally-off Trenched-and-Implanted Vertical JFETs,” Power Semiconductor Device and ICs 2003,ISPSD 2003 IEEE 15thInternational Symposium, IEEE, Apr. 14-17, 2003, pp. 50-53, (Discussed on pp. 1-2 and 15 of the specification).
Office Action dated Feb. 3, 2009 in corresponding German patent application No. 10 2007 017 002.7-33 (and English translation).

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