SIC power DMOSFET with self-aligned source contact

Details SIC power DMOSFET with self-aligned source contact SIC power DMOSFET with self-aligned source contact

2009-04-23

2011-10-11

Dang, Phuc (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S076000, C438S142000

Reexamination Certificate

active

08035112

ABSTRACT:
An intermediate product in the fabrication of a MOSFET, including a silicon carbide wafer having a substrate and a drift layer on said substrate, said drift layer having a plurality of source regions formed adjacent an upper surface thereof; a first oxide layer on said upper surface of said drift layer; a plurality of polysilicon gates above said first oxide layer, said plurality of polysilicon gates including a first gate adjacent a first of said source regions; an oxide layer over said first source region of greater thickness than said first oxide layer; and, an oxide layer over said first gate of substantially greater thickness than said oxide layer over said first source region.

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