SiC MOSFET for use as a power switch and a method of...

Details SiC MOSFET for use as a power switch and a method of... SiC MOSFET for use as a power switch and a method of...

2005-06-07

2005-06-07

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S347000

Reexamination Certificate

active

06903373

ABSTRACT:
A lateral metal-oxide semiconductor field effect transistor (MOSFET) formed over a substrate of a semiconductor wafer, a method of manufacturing the same and a semiconductor device incorporating the MOSFET or the method. In one embodiment, the MOSFET includes a silicon carbide layer located over or withing the substrate, a gate formed on the silicon carbide layer. The MOSFET further includes source and drain regions located in the silicon carbide layer and in contact with the gate, the silicon carbide layer increasing a breakdown voltage of the MOSFET.

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