SiC metal semiconductor field-effect transistor

Details SiC metal semiconductor field-effect transistor SiC metal semiconductor field-effect transistor

2004-08-31

2008-03-18

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257SE21055

Reexamination Certificate

active

07345309

ABSTRACT:
A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.

REFERENCES:
patent: 5043776 (1991-08-01), Hida
patent: 5510630 (1996-04-01), Agarwal et al.
patent: 5925895 (1999-07-01), Sriram et al.
patent: 6686616 (2004-02-01), Allen et al.
patent: 2003/0075719 (2003-04-01), Sriram
patent: 2004/0099888 (2004-05-01), Sriram
“Metal-semiconductor field-effect transistor (MESFET).” In Newnes Dictionary of Electronics, Newnes (1999). Retrieved Jan. 22, 2007, from http://www.xreferplus.com/entry/755069.

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