SiC material, semiconductor device fabricating system and...

Compositions: ceramic – Ceramic compositions – Carbide or oxycarbide containing

Reexamination Certificate

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C501S087000, C257S077000, C117S084000, C117S951000

Reexamination Certificate

active

07410923

ABSTRACT:
A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of the β-Sic csystals to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes Of the β-SiC crystals is 0.15 or above. The SiC material may contain both β-SiC crystals and α-SiC crystals of 6H structure. A base body with a SiC material by a CVD process is used as an internal component member of a semiconductor device fabricating system.

REFERENCES:
patent: 4912063 (1990-03-01), Davis et al.
patent: 5011549 (1991-04-01), Kong et al.
patent: 5106687 (1992-04-01), Tanino et al.
patent: 5200022 (1993-04-01), Kong et al.
patent: 5471946 (1995-12-01), Scholz et al.
patent: 5604151 (1997-02-01), Goela et al.
patent: 5789141 (1998-08-01), Usujima
patent: 5868848 (1999-02-01), Tsukamoto
patent: 5937316 (1999-08-01), Inaba et al.
patent: 6063513 (2000-05-01), Tanino
patent: 6083812 (2000-07-01), Summerfelt
patent: 6153166 (2000-11-01), Tanino
patent: 6936102 (2005-08-01), Otsuki et al.
patent: 793260 (1997-09-01), None
patent: 854371 (1998-07-01), None
patent: 901152 (1999-03-01), None
patent: 926109 (1999-06-01), None
patent: 01290521 (1989-11-01), None
patent: 03126671 (1991-05-01), None
patent: 06191972 (1994-07-01), None
patent: 08290968 (1996-11-01), None
patent: 9-129557 (1997-05-01), None
patent: 9-246238 (1997-09-01), None
patent: 10-158097 (1998-06-01), None
patent: 2844374 (1998-10-01), None
patent: 2000-160343 (2000-06-01), None
Patent Abstracts of Japan. English Abstract of JP 01-290521A (1989).
Patent abstracts of Japan. English Abstract and computer translation of JP 08-290968 A (1996).
PCT Notification of Transmittal of Copies of Translation of the International Preliminary Examination Report (PCT/IB/338) issued for PCT/JP00/05178.
International Preliminary Examination Report (PCT/IPEA/409) (translated) issued for PCT/JP00/05178.
Patent Abstracts of Japan. English abstract of JP 03-126671 (1989).
English Abstract of JP 6-191972A (1994).

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