SiC crystal and semiconductor device

Details SiC crystal and semiconductor device SiC crystal and semiconductor device

2008-05-12

2010-12-21

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S079000, C257S082000, C257SE33036, C428S698000, C428S704000, C423S345000, C423S439000

Reexamination Certificate

active

07855385

ABSTRACT:
The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017cm−3; donor impurities that are in a concentration less than 1×1019cm−3and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017cm−3and donor impurities that are in a concentration less than 1×1019cm−3and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

REFERENCES:
patent: 2005/0106423 (2005-05-01), Fujita
patent: 2007/0176531 (2007-08-01), Kinoshita et al.
patent: 2008/0038531 (2008-02-01), Sawamura et al.
patent: 2428681 (2007-02-01), None
patent: 2005-187791 (2005-07-01), None
patent: WO2005/090515 (2005-09-01), None

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