SiC complex sintered bodies and production thereof

Details SiC complex sintered bodies and production thereof SiC complex sintered bodies and production thereof

1988-07-21

1990-10-16

Group, Karl

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

501 91, 501 92, 501 96, 264 65, C04B 3556

Patent

active

049635166

ABSTRACT:
A silicon carbide complex sintered body including 20 to 99 wt % of SiC, 80 to 0.5 wt % of at least one compound selected from the group consisting of W.sub.2 B.sub.5 and/or MoB.sub.2, and 0.5 to 5 wt % of at least one material selected from the group consisting of boron, carbon, and boron carbide. A process for producing the sintered body by preparing a mixed powder is also disclosed, wherein the mixed powder includes 20 to 99 wt % of SiC powder having an average particle diameter of not greater than 5 microns, 80 to 0.5 wt % of at least one compound selected from the group consisting of W.sub.2 B.sub.5 and MoB.sub.2, and 0.1 to 5 wt %, when calculated as boron, of boron or a compound containing boron, and 0.1 to 5 wt %, when calculated as carbon, molding the mixture, and firing the molding in a temperature range from 1,900.degree. to 2,500.degree. C. in vacuum or in an inert atmosphere.

REFERENCES:
patent: 4209474 (1980-06-01), Prochazka
patent: 4541975 (1985-09-01), Honma et al.
patent: 4555358 (1985-11-01), Matsushita et al.
patent: 4705761 (1987-11-01), Kosugi

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