Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2004-06-14
2009-10-06
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S019000, C257S201000, C257S616000, C257SE31035, C257SE33009, C438S285000, C438S936000, C117S939000, C148SDIG016
Reexamination Certificate
active
07598513
ABSTRACT:
A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD4with SiH3GeH3. Using the method, single-phase SixSnyGe1-x-ysemiconductors (x≦0.25, y≦0.11) are grown on Si via Ge1-xSnxbuffer layers The Ge1-xSnxbuffer layers facilitate heteroepitaxial growth of the SixSnyGe1-x-yfilms and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiH3GeH3species was prepared using a new and high yield method that provided high purity semiconductor grade material.
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Bauer Matthew
Kouvetakis John
Tolle John
Arizona Board of Regents, Acting for and on behalf of Arizona St
McDonnell Boehnen & Hulbert & Berghoff LLP
Rao Steven H
Weiss Howard
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