Si surface cleaning for semiconductor circuits

Details Si surface cleaning for semiconductor circuits Si surface cleaning for semiconductor circuits

2011-08-09

2011-08-09

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S706000, C438S906000, C257SE21224, C257SE21226, C257SE21245

Reexamination Certificate

active

07994066

ABSTRACT:
A method is disclosed for the cleaning of a Si surface at low temperatures. Oxide on the Si surface is brought into contact with Ge, which then sublimates off the surface. The Ge contamination remaining after the oxide removal is cleared away by an exposure to an alkali halide. The disclosed cleaning method may by used in semiconductor circuit fabrication for preparing surfaces ahead of epitaxial growth.

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