Si.sub.3 N.sub.4 Coated crucible and die means for growing singl

Chemistry: physical processes – Physical processes – Crystallization

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156608, 156617SP, 156DIG64, 156DIG83, 156DIG88, 432264, 432265, 427 94, B01J 1718, C01B 3302

Patent

active

040908518

ABSTRACT:
Mechanical components, e.g. die and/or crucible or the like structures with which single silicon crystals are grown from the melt as shaped articles in thin sheet or ribbon geometry, are advantageously comprised, for their material of construction, of a suitable thermally stable and inert foundation substrate coated or provided on at least the silicon-contacting surface(s) thereof with a thin, uniform, integral surface layer deposit of pyrolitic silicon nitride (Si.sub.3 N.sub.4) obtained by the chemical vapor deposition (i.e., "CVD") technique.

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patent: 3226194 (1965-12-01), Kuntz
patent: 3341361 (1967-09-01), Gorski
patent: 3393054 (1968-07-01), Rupprecht et al.
patent: 3413090 (1968-11-01), Krock et al.
patent: 3453352 (1969-07-01), Goundry
patent: 3650703 (1972-03-01), LaBelle, Jr. et al.
patent: 3922475 (1975-11-01), Manasevit
patent: 4000030 (1976-12-01), Ciszek
Croft Rev. of Ceramic Technology, #26, Feb. 1974, pp. 1-12.

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