Si/SiGe vertical junction field effect transistor

Details Si/SiGe vertical junction field effect transistor Si/SiGe vertical junction field effect transistor

1997-02-19

1998-02-03

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257616, 257192, 437128, 437131, H01L 2980, H01L 2120

Patent

active

057147779

ABSTRACT:
A junction field effect transistor and method for making is described incorporating horizontal semiconductor layers within an opening to form a channel and a semiconductor layer through which the opening was made which forms a gate electrode surrounding the channel. The horizontal semiconductor layers may be a SiGe alloy with graded composition near the source and drain. The invention overcomes the problem of forming low resistance JFET's and provides a gate length that is easily scaleable to submicron dimensions for rf, microwave, millimeter and logic circuits without short channel effects.

REFERENCES:
patent: 5367184 (1994-11-01), Chartre
IBM Technical Disclosure Bulletin, vol. 11,#3, pp. 332-333 Aug. 1968 by Drangeid.

Affiliated with

Also associated with

Rating

Si/SiGe vertical junction field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Si/SiGe vertical junction field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Si/SiGe vertical junction field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-665089