Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device
Reexamination Certificate
2011-03-08
2011-03-08
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
C257SE29340, C438S141000, C438S979000
Reexamination Certificate
active
07902569
ABSTRACT:
Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current. Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current.
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Berger Paul R.
Jin Niu
Thompson Philip E.
Fay Sharpe LLP
Pert Evan
The Ohio State University Research Foundation
The United States of America as represented by the Secretary of
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