Si/SiGe interband tunneling diode structures including SiGe...

Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device – Reverse bias tunneling structure

Reexamination Certificate

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C257S104000

Reexamination Certificate

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10903442

ABSTRACT:
A silicon-based interband tunneling diode (10, 110) includes a degenerate p-type doping (22, 130) of acceptors, a degenerate n-type doping (32, 118) of donors disposed on a first side of the degenerate p-type doping (22, 130), and a barrier silicon-germanium layer (20, 136) disposed on a second side of the degenerate p-type doping (22, 130) opposite the first side. The barrier silicon-germanium layer (20, 136) suppresses diffusion of acceptors away from a p
junction defined by the degenerate p-type and n-type dopings (22, 32, 118, 130).

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