Si/C superlattice useful for semiconductor devices

Details Si/C superlattice useful for semiconductor devices Si/C superlattice useful for semiconductor devices

2006-04-04

2006-04-04

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S022000, C257S028000, C257S076000, C257S077000, C257SE29297, C257SE29298

Reexamination Certificate

active

07023010

ABSTRACT:
A Si/C superlattice useful for semiconductor devices comprises a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers. Structures and devices comprising the superlattice and methods are described.

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