Shutter linkage for an ion implantation apparatus

Details Shutter linkage for an ion implantation apparatus Shutter linkage for an ion implantation apparatus

1995-07-26

1996-07-09

Pascal, Robert

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Electron or ion source

31511121, 31511191, H01J 3708

Patent

active

055347525

ABSTRACT:
An improved shutter activating mechanism for an ion implantation apparatus, used to implant ions into semiconductor wafers, is described. The apparatus has an ion source, an ion accelerator, an ion beam shutter, and an ion beam shaping plate system. The improvement consists of a improved shutter activating mechanism with a rotatable shaft fixed to the ion beam shutter, a cross bar fed to the rotatable shaft, a abutment surface for limiting rotational movement of the cross bar, and a driving solenoid provided with a push rod. A bifurcated element is fixed to the end of the push rod which has aligned transverse apertures, a link joining the bifurcated element and the push rod, the link having an aperture on one end, a bearing assembly to allow limited axial movement, an a first pin through the transverse aperture and the bearing assembly. The link has a bifurcated end with transverse aperture. A second pin provides a connection between the bifurcated end of the link and the cross bar.

REFERENCES:
patent: 4090452 (1978-05-01), Segar
patent: 4242591 (1980-12-01), Harville

Affiliated with

Also associated with

Rating

Shutter linkage for an ion implantation apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Shutter linkage for an ion implantation apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shutter linkage for an ion implantation apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1869172