Shorting structure for multilayer semiconductor switching device

Details Shorting structure for multilayer semiconductor switching device Shorting structure for multilayer semiconductor switching device

1975-04-16

1976-12-07

Lynch, Michael J.

357 20, 357 55, 357 57, 357 86, H01L 29747

Patent

active

039966011

ABSTRACT:
The specification discloses a semiconductor switch having a body formed from at least five layers of alternating first and second types of semiconductor material. A pair of regions of the first type of semiconductor material are formed on an outer surface of the body and are spaced apart by a pair of regions of the second type of semiconductor material. Electrodes contact the regions and form a gate and an anode. An electrode contacts the other outer surface of the body to form a second anode. Structure is provided for electrically connecting at least one of the regions with an intermediate layer which is interior within the body and is not immediately adjacent the regions. This shorting structure increases the switching speed of the device and improves the commutating and static dv/dt capabilities of the device.

REFERENCES:
patent: 3317746 (1967-05-01), Hutson
patent: 3475666 (1969-10-01), Hutson
patent: 3671821 (1972-06-01), Nakata et al.
patent: 3812405 (1974-05-01), Clark

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