Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1981-09-08
1985-08-27
Munson, Gene M.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 13, 357 15, 357 231, 357 237, 357 45, 357 49, 365 96, 365105, H01L 2904, H01L 2990, H01L 2710, G11C 1700
Patent
active
045381674
ABSTRACT:
The semiconductor device relates to a shorted junction type programmable read only memory semiconductor device. The memory consists of a semiconductor region including a PN junction or a Schottky junction and a control electrode coupled to the junction. The junction is destroyed or shorted by causing a field or carrier injection effect in the semiconductor region with a voltage impressed on the control electrode.
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Ewald et al., "Fusible Link Device", IBM Technical Disclosure Bulletin vol. 19, (177), pp. 3089-3090.
Fukushima et al., "A High Speed Schottky 4K-Bit PROM . . . ", 11th Conf. (1979 Int.) Solid State Devices, Tokyo, 8/79, Dig. Tech. Papers, pp. 75-76.
Geis et al., "Crystallographic Orientation of Silicon on an Amorphous Substrate . . . ", Appl. Phys. Lett. vol. 35, (Jul. 1, 1979) pp. 71-74.
"Shorted Junction Type Prom Element Using Polysilicon", Distributed in Announcement in Conference of Inst. Electronics and Communication Engineers of Japan, Mar. 5, 1980, p. 2-109.
Arai Eisuke
Kiuchi Kazuhide
Yoshino Hideo
Munson Gene M.
Nippon Telegraph & Telephone Public Corporation
VanOphem Remy J.
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