Shorted anode lateral insulated gate bipolar transistor

Details Shorted anode lateral insulated gate bipolar transistor Shorted anode lateral insulated gate bipolar transistor

1996-07-15

1998-06-30

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257140, 257141, H01L 2974, H01L 31111

Patent

active

057738521

ABSTRACT:
A shorted anode lateral insulated gate bipolar transistor includes a semiconductor layer of a first conductivity type, a first current electrode, a second current electrode, a first insulation layer, a first gate electrode, a second gate electrode, a first high concentration impurity region of a second conductivity type, a low concentration impurity region of the second conductivity type, a first high concentration impurity region of the first conductivity type, a second high concentration impurity region of the second conductivity type, a third high concentration impurity region of the second conductivity type, and a second high concentration impurity region of the first conductivity type.

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