Short wavelength impurity band conduction detectors

Details Short wavelength impurity band conduction detectors Short wavelength impurity band conduction detectors

1988-06-20

1990-01-23

Edlow, Martin H.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 58, 2503384, 250349, 25037001, N01L 2912, G01J 100, G01T 122

Patent

active

048962023

ABSTRACT:
An edge illuminated impurity band conduction detector includes an extrinsic semiconducting IR-active layer with a first conductivity type impurity concentration high enough to create an impurity energy band. An intrinsic semiconducting blocking layer includes first and second conductivity type impurity concentration low enough that substantially no charge transport occurs by an impurity conduction mechanism. The IR-active and blocking layers are positioned between first and second contacts such that an electrical potential applied to the contacts creates an electric field across the layers. The detector is oriented such that the electromagnetic energy impinges on an edge of the IR-active layer and propagates in the IR-active layer in a direction substantially orthogonal to the applied electric field, the IR-active layer extending in the orthogonal direction for at least the absorption length of the electromagnetic energy. The detector may further include an extrinsic semiconducting buffered layer positioned with the IR-active layer between the blocking layer and the buffered layer, the buffered layer having a first conductivity type impurity concentration high enough to create an impurity energy band and a second conductivity type impurity concentration high enough that first conductivity type carriers injected into the buffered layer recombine with ionized first conductivity type impurities. In this embodiment, the IR-active layer further includes a second conductivity type impurity concentration low enough that first conductivity type carriers photogenerated in the IR-active layer can drift through the IR-active layer without recombining with ionized first conductivity type impurities.

REFERENCES:
patent: 3904879 (1975-09-01), Amingual et al.
patent: 4244088 (1980-12-01), Myers
patent: 4568960 (1986-02-01), Petroff et al.
patent: 4586068 (1986-04-01), Petroff et al.

Affiliated with

Also associated with

Rating

Short wavelength impurity band conduction detectors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Short wavelength impurity band conduction detectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Short wavelength impurity band conduction detectors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-648069