Short-resistant connection of polysilicon to diffusion

Details Short-resistant connection of polysilicon to diffusion Short-resistant connection of polysilicon to diffusion

1979-07-30

1982-03-30

Larkins, William D.

357 42, 357 68, 357 86, H01L 2704

Patent

active

043227368

ABSTRACT:
A semiconductor device having a contact structure which does not lose the merit of high density circuit integration and yet can suppress generation of a leakage current is disclosed. In its basic form, the semiconductor device comprises a semiconductor substrate of one conductivity type having a first region of opposite conductivity type extending from one major surface of the semiconductor substrate to the interior of the substrate. A semiconductor layer extends on the semiconductor substrate via a first insulating film from a contact with the one major surface of the semiconductor substrate outside the first region of opposite conductivity type to a point immediately adjacent the first region. A second insulating film covers the first region of opposite conductivity type and the semiconductor layer. An aperture formed in the second insulating film exposes a portion of the first region of opposite conductivity type and a portion of the semiconductor layer close to the first region portion. A metallic layer is provided within the aperture and connects the first region of opposite conductivity type and the semiconductor layer. A second region of opposite conductivity type is provided along the entire surface portion of the semiconductor substrate under the semiconductor layer at the aperture and adjacent to the first region of opposite conductivity type.

REFERENCES:
patent: 3750268 (1973-08-01), Wang
patent: 3812521 (1974-05-01), Davis
patent: 3891190 (1975-06-01), Vadasz
patent: 4033797 (1977-07-01), Dill et al.
patent: 4041522 (1977-08-01), Oguey et al.
patent: 4143388 (1979-03-01), Esaki et al.
patent: 4205330 (1980-05-01), Klein

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