Short circuit protection for parallel connected devices

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

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Details

327324, 327434, 327440, H03K 1772

Patent

active

059492732

ABSTRACT:
A power semiconductor circuit provides a simple gate drive for switch components for the use in parallel-connected half-bridges, taking into consideration a gate voltage limitation to achieve short-circuit resistance. The circuit consists of drive circuits and main power circuits. The present invention contributes to solving the problems of the influence of the main power circuit on the drive circuit. According to the invention, switching transistors connected in parallel to the driver through separate activation and deactivation resistors, the former of relatively low resistance and the latter of relatively high resistance. Each of the switching transistors has an emitter resistor connected in parallel with a respective clamping diode to a sum point at ground, the cathode to the emitter. Each of the activation resistors is connected in series to the driver through a respective diode whose cathode is connected to the activation resistor. The gate of each switching transistor is connected to a supply voltage through a respective shunt diode with the cathode connected to the supply voltage to ensure that, due to the switching transistor's internal capacitive reactions, no gate voltage increase occurs that is higher than the supply voltage of the driver stage. The diodes are connected in series with the activation resistors prevent equalization between the gate ports via these resistors. Fast epitaxial diodes should be preferred in the gate circuit because of their low parasitic capacitances.

REFERENCES:
patent: 5526216 (1996-06-01), Konrad et al.
patent: 5534810 (1996-07-01), White

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