Short circuit protection by gate voltage sensing

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Signal transmission integrity or spurious noise override

Reexamination Certificate

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Details

C327S309000, C327S381000, C327S432000, C361S091100, C361S111000

Reexamination Certificate

active

07463079

ABSTRACT:
A protection circuit monitors the gate voltage of an insulated gate bipolar transistor (IGBT) or metal oxide semiconductor field effect transistor (MOSFET) to protect the transistor during a time when it is being turned on. In one embodiment, the circuit monitors a transient gate voltage of the transistor when it is turned on. A short or overcurrent condition is detected when the gate voltage exceeds a delayed reference signal.

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